| USC Tool Name | III-V Etcher | RIE 80 | DRIE | XeF2 Etcher | YES O2 Plasma |
|---|---|---|---|---|---|
| Primary Use Case | Etching III-V materials | Etching dielectrics | Etching deep Si with Bosch process | Etching Si quickly and isotropically with high selectivity | Descum, photoresist stripping, or organic material removal |
| Previously Etched Materials | Primary: InP, InAs, GaN, AlGaAs, InGaAsP, ITO Other: Si, SiC, MoS2, WSe, Graphene | Primary: SiO2, SiN, HfO2 Other: Parylene | Primary: Si Other: Parylene, polyimide, LiNbO3, BCB, SiO2, SiN | Primary: Si | Primary: Photoresist Other: Graphene, CNT |
| Material Restrictions | No metals allowed to be exposed to plasma (Cr is one exception) No deep etching polymers (>1 µm) | No metals allowed to be exposed to plasma No deep etching polymers (>1 µm) | No metals allowed to be exposed to plasma | None | None |
| Sample Size | Normally fitted for 3″ Smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ possible | Up to 200 mm wafers | Normally fitted for 4″ Smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ possible | Up to 100 mm wafers | Up to 200 mm wafers |
| Ar | x | x | x | – | – |
| O2 | x | x | x | – | x |
| CF4 | – | x | x | – | – |
| CHF3 | – | x | x | – | – |
| SF6 | x | x | x | – | – |
| C4F8 | – | – | x | – | – |
| CH4 | x | – | – | – | – |
| H2 | x | – | – | – | – |
| Cl2 | x | – | – | – | – |
| BCl3 | x | – | – | – | – |
| SiCl4 | x | – | – | – | – |
| XeF2 | – | – | – | x | – |
| Max Table RF Power | 300W | 300W | 600W | n/a | 1000W |
| Max ICP Power | 1500W | n/a | 3000W | n/a | n/a |
| He Backside Cooling | Yes | No | Yes | No | No |
| Table Temperature | 0C – 70C | 20C | 20C | 20C | Ambient – 250C |
| Endpoint Detection? | Horiba Jobin Yvon LEM G50 | Horiba Jobin Yvon LEM G50 | n/a | n/a | n/a |
| Load Lock? | Yes | No | Yes | No | No |
| Make | Oxford | Oxford | Oxford | Custom-built | YES |
| Model | PlasmaPro 100 Cobra 180 | PlasmaPro 80 RIE | System 100 Phoenix GP | Custom-built | CV200RFS(E) |
Last updated on: 9/25/2023