OXFORD PRO 80 RIE
Materials – Si, SiO2, Si3N4
Open loading Gases – Ar, O2, SF6, CHF3, CF4, End point detection
Substrate size – pieces to up to 200mm diameter RF power 300W
OXFORD PLASMA LAB 100 ICP/DRIE
Si Bosch process Load lock Gases – O2, Ar, CF4, C4F8, SF6 and CHF3. Up to 6” wafer. 4” wafer clamping.
He backside cooling.
3000W ICP generator
500W RF generator platen
OXFORD PLASMA PRO 100 III V
III-V materials Load lock ICP (Inductively Coupled Plasma) 1500W RF 300W
Gases – H2, N2, O2, Ar, SF6, CH4, Cl2, BCl3, SiCl4
Temperature range -30C to 400C
Substrate size – clamp with contact 2”, 3” and 4”.
Need carrier wafer for pieces.
Substrate cooling using-backside He
SOP – OXFORD III V
XeF2 ISOTROPIC ETCH
Gases – N2 Solid XeF2 source, pulsed etching
Etching materials – Si Up to 6” wafer