MJB3 MASK ALIGNER
Topside alignment Exposure wavelength: UV 400, 350-450 nm
UV lamp: 350 W Hg Arc lamp
Exposure Resolution: 0.8um Exposure modes: Soft, Hard, and vacuum contacts
Substrate size: Pieces to 3” Mask size: 3” and 4”
MJB3 MASK ALIGNER
Top and backside alignment
Exposure wavelength: UV 400, 350-450 nm
UV lamp: 350 W Hg Arc lamp
Exposure Resolution: 0.8um
Exposure modes: Soft, Hard, and vacuum contacts
Substrate size: Pieces to 3” Mask size: 3” and 4”
MJB4 MASK ALIGNER
Topside alignment Light source UV 400, 350 – 450nm
Eyepieces: 10x Objectives: 5x, 10x, 20x Resolution: 0.8 um Substrate size – pieces to 2” Mask size – 3”, 4” and 5”
MA BA6 GEN4 MASK ALIGNER
Wafer Size up to 150 mm,
Pieces down to 5 x 5 mm
Square substrate size up to 6″ x 6″ Mask Size 4”x4” up to 7″ x 7″
Exposure Source LED 450W
Wavelength Range UV400 350 – 450 nm Resolution down to 0.8 μm
Digital camera 2X Objective 5X, 10X Top/Back side alignment
HEIDELBERG DWL 66+
Min substrate/Mask: 5×5 mm2
Max substrate/Mask: 9”x9”
Resolution 10nm Manual, semi-automatic, and fully automatic alignment
Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
Three different write modes (to allow high speed and high resolution to be balanced): High resolution (min feature size 0.3um)
Mode IV: min size 2um
Mode V: min size 4um Backside alignment
RAITH EBPG 5150
Thermal Field Emission operation at 50 & 100 kV Up to 6” substrate 155 mm writing capability
Minimum feature size <10nm
Beam Current up to 350nA
Pattern Generator 125 MHZ Genlsys – Beamer