FURNACE/OVEN
RESIST STRIP/DESCUM
System for 2″ to 200 mm wafers,
PLC control of valves, temperature set points, plasma generation power, auto operation, touch screen interface,
RF Plasma Power: 40 kHz, 100-1000 W capacitive, downstream Wafer Platen temperature range from ambient to 250° C,
Capacity: single wafer/pieces for 50mm – 200mm;
Dual wafer/pieces for two 100mm
Mass Flow Controllers.
Real-Time data collection of all process control data
RAPID THERMAL ANNEALING
Wafer sizes: Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability
Recommended ramp up rate: Programmable, 10°C to 120°C per second. ERP Pyrometer 450-1250°C with ±1°C, Thermocouple 100-800°C with ±0.5°C accuracy & rapid response.
Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
5 gas lines with MFC
SOLVENT WETBENCHES
Spinners (Headway and Laurel), Chemical Bath/Solvent Rinse, Ultrasonic Bath, Torrey Pines Hot Plate, CEE Apogee Hotplate
ACID/BASE FUMEHOOD
Quick Dump Rinse, Chemical Baths with dilution drain, Quartz Heated Bath, Torrey Pines Hot Plate